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MJE350 - Medium Power PNP Transistors

Description

Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Case Junction to Ambient Symbol VCBO VCEO VEBO IC PD Tj, Tstg Rth (j-c)

Features

  • PNP Plastic Medium Power Silicon Transistor.
  • Designed for use Line-Operated.

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Datasheet Details

Part number MJE350
Manufacturer Multicomp
File Size 127.18 KB
Description Medium Power PNP Transistors
Datasheet download datasheet MJE350 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package Dimensions A B C D E F G L M N P S Minimum Maximum 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.25 (Typical) 0.49 0.75 4.5 (Typical) 15.7 (Typical) 1.27 (Typical) 3.75 (Typical) 3.0 3.2 2.5 (Typical) Dimensions : Millimetres Pin Configuration: 1. Emitter 2. Collector 3. Base Page 1 10/05/08 V1.
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