MRFE6S9201HSR3, MRFE6S9201HR3 Datasheet - Motorola Semiconductor Products

MRFE6S9201HSR3 RF Power Field Effect Transistors

Short RF Beads 33 pF Chip Capacitors 10 μF, 50 V Tantalum Capacitors 0.6 - 4.5 pF Variable Capacitors, Gigatrim 3.3 pF Chip Capacitors 4.7 pF Chip Capacitors 15 pF Chip Capacitors 1.0 pF Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 1.2K pF Chip Capacitors 20K pF Chip Capacitors 10 μF, 50 V C.

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. Typical Single - Carrier N - CDMA Perfo.

MRFE6S9201HSR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Greater Negative Gate - Source Voltage Range for Improved Class C Operation

* Qualified U

MRFE6S9201HR3_MotorolaSemiconductorProducts.pdf (526.88 KB)

MRFE6S9201HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRFE6S9201HSR3, MRFE6S9201HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRFE6S9201HSR3, MRFE6S9201HR3

Manufacturer:

Motorola Semiconductor Products

File Size:

526.88 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRFE6S9201HSR3, MRFE6S9201HR3.
Please refer to the document for exact specifications by model.

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MRFE6S9201HSR3 MRFE6S9201HR3 Power Field Effect Transistors Motorola Semiconductor Products

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