MRFE6S9205HSR3, MRFE6S9205HR3 Datasheet - Freescale Semiconductor

MRFE6S9205HSR3 RF Power Field Effect Transistors

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., Full Fre.

MRFE6S9205HSR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Optim

MRFE6S9205HSR3, MRFE6S9205HR3 Datasheet

MRFE6S9205HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRFE6S9205HSR3, MRFE6S9205HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRFE6S9205HSR3, MRFE6S9205HR3

Manufacturer:

Freescale Semiconductor

File Size:

398.72 KB

Description:

Rf power field effect transistors.

This datasheet PDF includes multiple part numbers: MRFE6S9205HSR3, MRFE6S9205HR3.
Please refer to the document for exact specifications by model.

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MRFE6S9205HSR3 MRFE6S9205HR3 Power Field Effect Transistors Freescale Semiconductor

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