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BCW70LT1 - General Purpose Transistors

Features

  • ng method, the difference shall be a maximum of 10°C.
  • The soldering temperature and time shall not exceed 260°C for more than 10 seconds.
  • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less.
  • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent f.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW69LT1/D General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE BCW69LT1 BCW70LT1 3 1 2 EMITTER 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VEBO IC Value –45 –5.0 –100 Unit Vdc Vdc mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING BCW69LT1 = H1; BCW70LT1 = H2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.
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