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Motorola Electronic Components Datasheet

P2N2907 Datasheet

AMPLIFIER TRANSISTORS

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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation T/\ = 25°C
Derate above 25°C
Total Device Dissipation Tq = 25°C
Derate above 25 °C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T stg
Symbol
R»jc
RftJA
P2N P2N
2907 2907A
40 60
60
5.0
600
625
5.0
1.5
12
-55 to +150
Max
83.3
200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
dC = 10 mAdc, IB = 0)
P2N2907
P2N2907A
Collector-Base Breakdown Voltage
(IC = 10 tiAdc, = 0)
Emitter-Base Breakdown Voltage
Oe = 10 uAdc, Ic = 0)
Collector Cutoff Current
tVc'E = 30 Vdc, VEB(off) = 9-5 Vdc)
Collector Cutoff Current
(V C B = 50 Vdc, = 0)
(VcB = 50 Vdc, IE = 0, Ta = 125°C)
.
P2N2907
P2N2907A
P2N2907
P2N2907A
Base Current
(V C E = 30 Vdc, VEB(off) = 0.5 Vdc)
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, Vce = 10 Vdc)
C(l = LOmAdc, V C E = 10 Vdc)
dC = 10 mAdc, Vce = 10 Vdc)
dC = 150 mAdc, VcE = 10 Vdc) (1)
dC = 500 mAdc, VcE = 1 Vdc) (1)
P2N2907
P2N2907A
P2N2907
P2N2907A
P2N2907
P2N2907A
P2N2907, P2N2907A
P2N2907
P2N2907A
Collector-Emitter Saturation Voltage (1)
(lC = 1 50 mAdc, Ib = 1 5 mAdc)
(lC = 500 mAdc, Ib = 50 mAdc)
Base-Emitter Saturation Voltage (1)
(lC = 1 50 mAdc, Ifi = 1 5 mAdc)
(lC = 500 mAdc, Ib = 50 mAdc)
P2N2907
P2N2907A
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
AMPLIFIER TRANSISTORS
PNP SILICON
Refer to MPS2907 for graphs.
Symbol
V(BR)CE0
V(BR)CBO
V(BR)EBO
•CEX
ICBO
Min
40
60
60
5.0
IB
hFE
VCE(sat)
VBE(sat)
35
75
50
100
75
100
100
30
50
Max
50
0.020
0.010
20
10
50
300
0.4
1.6
1.3
2.6
Unit
Vdc
Vdc
Vdc
nAdc
^Adc
nAdc
Vdc
Vdc
2-289


Motorola Electronic Components Datasheet

P2N2907 Datasheet

AMPLIFIER TRANSISTORS

No Preview Available !

P2N2907, P2N2907A
ELECTRICAL CHARACTERISTICS (continued) (T A = 25 °C unless otherwise noted.
Characteristic
SMALL-SIGNAL CHARACTERISTICS
Symbol
|
Current-Gam - Bandwidth Product (1), (2)
(lc = 50 mAdc, Vce = 20 Vdc, f = 1 00 MHz)
fT
Output Capacitance
(Vcb = 1 Vdc, IE = 0, f = 1 .0 MHz)
Cobo
Input Capacitance
(Vbe = 2.0 Vdc, lc = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Cjbo
Turn-On Time
Delay Time
Rise Rime
Turn-Off Time
Storage Time
Fall Time
(VCC = 30 Vdc, lc = 150 mAdc,
IB 1 =15 mAdc) (Figures 1 and 5)
(Vcc = 6.0 Vdc, lc = 1 50 mAdc,
•b1 = 'B2 - 1 5 mAdc) (Figure 2)
ton
td
tr
toff
ts
tf
|
Min
200
Max
|
8.0
30
50
10
40
110
80
30
|
MHz
PF
pF
ns
ns
ns
ns
ns
ns
FIGURE 1 - DELAY AND RISE
TIME TEST CIRCUIT
INPUT
z = so n
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
9 -30 V
200
1.0 k
O VW
TO OSCILLOSCOPE
RISE TIME < 6.0 ns
FIGURE 2 - STORAGE AND FALL
TIME TEST CIRCUIT
INPUT
z = 5on
+i5 v -mv
PRF - 150 PPS
RISE TIME «: 2.0 ns
P.W. < 200 ns
TO OSCILLOSCOPE
RISE TIME < 5.0 ns
2-290


Part Number P2N2907
Description AMPLIFIER TRANSISTORS
Maker Motorola
Total Page 2 Pages
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