• Part: P2N2907
  • Description: PNP SILICON PLANAR EPITAXIAL TRANSISTORS
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 88.07 KB
Download P2N2907 Datasheet PDF
Continental Device India
P2N2907
DESCRIPTION SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage VCEO VCBO VEBO 40 60 Collector Current Total Power Dissipation @ Ta=25ºC Derate above 25ºC ICM PD 600 625 Total Power Dissipation @ TC=25ºC Derate above 25ºC 1.5 12 Operating and Storage Junction Temperature Range Tj, Tstg - 55 to +150 P2N2907A 60 60 UNIT V V V m A m W m W/ºC W m W/ºC ºC THERMAL RESISTANCE Junction to Case Junction to Ambient Rth (j-c) Rth (j-a) 83.3 ºC/W 200 ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage Collector...