MRF7S35120HSR3 transistor equivalent, rf power field effect transistor.
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operatio.
operating at frequencies between 3100 and 3500 MHz.
* Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA, Pout.
47 Ω, 100 MHz Short Ferrite Bead 470 μF, 63 V Electrolytic Capacitor 47 μF, 50 V Electrolytic Capacitor 22 μF, 35 V Tantalum Capacitors 3.3 pF Chip Capacitor 2.7 pF Chip Capacitors 22 μF, 25 V Tantalum Capacitors 51 Ω, 1/4 W Chip Resistor Part Number.
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