| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile, and base st... |
| Features |
a vertical structure with a planar design. Motorola Application Note AN211A, “FETs in Theory and Practice,” is suggested reading for those not familiar with the construction and characteristics of FETs. This device was designed primarily for 12.5 volt VHF and UHF power amplifier applications. The major advantages of RF power MOSFETs include high ga...
|
| Datasheet |
 MRF5015 Datasheet - 154.23KB |
