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MRF5003 - N-CHANNEL BROADBAND RF POWER FET

Features

  • 1 µF, 100 mil Chip C14 160 pF, 100 mil Chip R1 43 Ω, 0.1 W Chip Resistor R2 1000 Ω, 0.1 W Chip Resistor R3 10 kΩ Potentiometer R4 3000 Ω, 0.1 W Chip Resistor L1 5 Turns, 0.126″ ID, #20 AWG Enamel Z1 to Z13 See Photomaster D1 1N4734 Motorola Zener Board.
  • G10, 1/32″ Input/Output Connectors.
  • SMA Figure 13. Schematic of Broadband Demonstration Amplifier.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5003/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base station FM equipment. • Guaranteed Performance at 512 MHz, 7.5 Volts Output Power = 3.0 Watts Power Gain = 9.5 dB Efficiency = 45% • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stability • All Gold Metal for Ultra Reliability • Capable of Handling 20:1 VSWR, @ 15.
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