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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Line NPN Silicon Push-Pull RF Power Transistor
Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 125 W Typical Gain = 10 dB Efficiency = 55% (Typ) • Built–In Input Impedance Matching Networks for Broadband Operation • Push–Pull Configuration Reduces Even Numbered Harmonics
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MRF392
125 W, 30 to 500 MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON
• Gold Metallization System for High Reliability • 100% Tested for Load Mismatch • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.