The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF10120/D
Microwave Long Pulse Power Transistor
Designed for 960 – 1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) • 100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR • Hermetically Sealed Industry Standard Package • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input and Output Matching for Broadband Operation • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MRF10120 Datasheet
