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Motorola Electronic Components Datasheet

BC237 Datasheet

Amplifier Transistors

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC237/D
Amplifier Transistors
NPN Silicon
COLLECTOR
1
BC237,A,B,C
BC238B,C
BC239,C
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
BC BC BC
Symbol 237 238 239
Unit
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCES
VEBO
IC
PD
45 25 25
50 30 30
6.0 5.0 5.0
100
350
2.8
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0 Watts
8.0 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA 357 °C/W
Thermal Resistance, Junction to Case
RqJC
125
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
BC237
BC238
BC239
V(BR)CEO
Emitter – Base Breakdown Voltage
(IE = 100 mA, IC = 0)
BC237
BC238
BC239
V(BR)EBO
Collector Cutoff Current
(VCE = 30 V, VBE = 0)
BC238
BC239
ICES
(VCE = 50 V, VBE = 0)
(VCE = 30 V, VBE = 0) TA = 125°C
BC237
BC238
BC239
(VCE = 50 V, VBE = 0) TA = 125°C
BC237
Min
45
25
25
6.0
5.0
5.0
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ Max Unit
—— V
——
——
—— V
——
——
0.2 15 nA
0.2 15
0.2 15
0.2 4.0 µA
0.2 4.0
0.2 4.0
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1


Motorola Electronic Components Datasheet

BC237 Datasheet

Amplifier Transistors

No Preview Available !

BC237,A,B,C BC238B,C BC239,C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
BC237A
BC237B/238B
BC237C/238C/239C
hFE
— 90 —
— 150 —
— 270 —
(IC = 2.0 mA, VCE = 5.0 V)
BC237
BC239
BC237A
BC237B/238B
BC237C/238C/239C
120 — 800
120 — 800
120 170 220
200 290 460
380 500 800
(IC = 100 mA, VCE = 5.0 V)
Collector – Emitter On Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base – Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base–Emitter On Voltage
(IC = 100 µA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz)
BC237A
BC237B/238B
BC237C/238C/239C
— 120 —
— 180 —
— 300 —
BC237/BC238/BC239
BC237/BC239
BC238
VCE(sat)
0.07 0.2
0.2 0.6
0.8
VBE(sat)
0.6 0.83
— 1.05
VBE(on)
0.55
0.5
0.62
0.83
0.7
V
V
V
BC237
BC238
BC239
fT MHz
— 100 —
— 120 —
— 140 —
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
Collector–Base Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Emitter–Base Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k,
f = 1.0 kHz)
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k,
f = 1.0 kHz, f = 200 Hz)
BC237
BC238
BC239
BC239
BC237
BC238
BC239
150 200
150 240
150 280
Cobo
4.5
Cibo — 8.0 —
NF
— 2.0 4.0
— 2.0 10
— 2.0 10
— 2.0 4.0
pF
pF
dB
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data



Part Number BC237
Description Amplifier Transistors
Maker Motorola
Total Page 4 Pages
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BC237 Datasheet PDF





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