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2N3727 - DUAL AMPLIFIER TRANSISTOR

Download the 2N3727 datasheet PDF. This datasheet also covers the 2N3726 variant, as both devices belong to the same dual amplifier transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3726-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N3727 PNP DUAL SILICON TRANSISTOR Central Semiconductor Corp
2N3720 Silicon PNP Power Transistors Microsemi Corporation
2N3720 PNP SILICON TRANSISTOR Seme LAB
2N3724 NPN HIGH VOLTAGE SILICON SWITCHING TRANSISTORS CDIL
2N3724 Bipolar NPN Device Seme LAB

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N3720 PNP Transistor
2N3724 SWITCHING TRANSISTOR
2N3725 SWITCHING TRANSISTOR
2N3726 DUAL AMPLIFIER TRANSISTOR
2N3712 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Collectori to Collector Voltage Voltage rating any lead to case Symbol Value Unit vCEO vCBO Vebo IB •c PD 45 Vdc 45 Vdc 5.0 Vdc 100 mAdc 300 mAdc One Die 400 2.29 Both Die 500 2.86 mW mW/°C Pd 0.85 4.85 1.4 Watt 8.0 mW/°C TJ- Tstg -65 to +200 °C VC1 VC2 ±200 ±200 Vdc Vdc ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown VoltageO) dC = 10 mAdc, Ib = 0) Collector-Base Breakdown Voltage dC = 0.
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