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2N3720 - Silicon PNP Power Transistors

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Microsemi Corporation

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2N3720 Silicon PNP Power Transistors by Microsemi Corporation - Datasheet Preview — Datasheet preview – 2N3720

Datasheet Details

Part number	2N3720
Manufacturer	Microsemi Corporation
File Size	55.85 KB
Description	Silicon PNP Power Transistors
Datasheet	2N3720 Datasheet
Additional preview pages of the 2N3720 datasheet.

Product details

Description

These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process.

Features

Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60 Vdc (Min) - 2N3720 DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ).
Silicon PNP Power Transistors.

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Other Datasheets by Microsemi Corporation

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Published: Mar 23, 2005 |