RD04HMS2 transistor equivalent, silicon mosfet power transistor.
1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode
2
3
(0.25) (0.2.
4.9+/-0.15
0.2+/-0.05
1
1.0+/-0.05
FEATURES
1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain .
RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power 6.0+/-0.15 amplifiers applications.
4.9+/-0.15
0.2+/-0.05
1
1.0+/-0.05
FEATURES
1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dB.
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