RD04LUS2 mosfet equivalent, silicon rf power mosfet.
High power gain and High Efficiency. Pout=4Wtyp, Drain Effi. =65%typ @ Vds=3.6V, Idq=280mA, Pin=0.4W, f=527MHz Integrated gate protection diode.
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APPLICA.
FEATURES
High power gain and High Efficiency. Pout=4Wtyp, Drain Effi. =65%typ @ Vds=3.6V, Idq=280mA, Pin=0.4W, f=527MHz.
RD04LUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
FEATURES
High power gain and High Efficiency. Pout=4Wtyp, Drain Effi. =65%typ @ Vds=3.6V, Idq=280mA, Pin=0.4W, f=527MHz Integrated gate protecti.
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