RA35H1516M Datasheet PDF (154-162MHz 40W 12.5V MOBILE RADIO) | Download Mitsubishi Electric Semiconductor RA35H1516M

RA35H1516M - 154-162MHz 40W 12.5V MOBILE RADIO

Description

The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Features

Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V).
Pout>40W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW.
Low-Power Control Current IGG=1mA (typ) at VGG=5V.
Module Size: 66 x 21 x 9.88 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout).

Datasheet Details

Part number	RA35H1516M
Manufacturer	Mitsubishi Electric Semiconductor
File Size	75.86 KB
Description	154-162MHz 40W 12.5V MOBILE RADIO
Datasheet	RA35H1516M Datasheet
Additional preview pages of the RA35H1516M datasheet.

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Full PDF Text Transcription

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MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum).

Published: Apr 16, 2005 |