RD70HHF1 datasheet, transistor equivalent, Mitsubishi

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Features and benefits

9.6+/-0.3 0.1 -0.01 3 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7 APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 5.0+/-0.3 18.5+/-0..

Application

OUTLINE DRAWING 4-C2 24.0+/-0.6
*High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz
*High Effici.

Description

RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/-0.6
*High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz
*High Efficiency: 60%typ.on HF Band 2 .

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