| Part Number | MGF1601B |
| Manufacturer | Mitsubishi |
| Title | MICROWAVE POWER GaAs FET |
| Description | The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetical... |
| Features |
• High output power at 1dB gain compression P1dB=21.8dBm(TYP.) • High linear power gain GLP=8dB(TYP.) @f=8GHz 0.5±0.15 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators. 2.5±0.2 3 QUALITY GRADE • GG RECOMMENDED BIAS C... |
| Datasheet |
 MGF1601B Datasheet 26.03KB |
