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MGF1601B-01 - High-power GaAs FET

Description

The MGF1601B-01, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.

The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits.

Features

  • High linear power gain Glp=8.0dB @f=8GHz.
  • High P1dB P1dB=21.8dBm(TYP. ) @f=8GHz.

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Datasheet preview – MGF1601B-01

Datasheet Details

Part number MGF1601B-01
Manufacturer Mitsubishi
File Size 322.56 KB
Description High-power GaAs FET
Datasheet download datasheet MGF1601B-01 Datasheet
Additional preview pages of the MGF1601B-01 datasheet.

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Full PDF Text Transcription

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< High-power GaAs FET (small signal gain stage) > MGF1601B-01 S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B-01, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits. FEATURES  High linear power gain Glp=8.0dB @f=8GHz  High P1dB P1dB=21.8dBm(TYP.
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