MGF1601B-01 fet equivalent, high-power gaas fet.
* High linear power gain Glp=8.0dB @f=8GHz
* High P1dB P1dB=21.8dBm(TYP.) @f=8GHz
APPLICATION
* S to X Band medium-power amplifiers and oscillators
QUALITY
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The MGF1601B-01, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for.
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