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Mitsubishi

CM900HG-90H Datasheet Preview

CM900HG-90H Datasheet

HVIGBT MODULES

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MITSUBISHI HVIGBT MODULES
CM900HG-90H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM900HG-90H
IC .................................................................. 900 A
VCES ...................................................... 4500 V
High Insulated Type
1-element in a Pack
AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57 ±0.25
190 ±0.5
57 ±0.25
57 ±0.25
5-M8 NUTS
64
2
(6) (4) (2)
CCC
C
3-M4 NUTS
screwing depth
min. 7.7
5
E
G
3
C
14 ±0.3
59.2 ±0.5
61.2 ±0.5
61.2 ±0.5
12 ±0.3
G
1E
8-φ7 MOUNTING HOLES
18 ±0.3
screwing depth
min. 16.5
EEE
(5) (3) (1)
CIRCUIT DIAGRAM
41 ±0.5
22 ±0.3
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
1
May 2009




Mitsubishi

CM900HG-90H Datasheet Preview

CM900HG-90H Datasheet

HVIGBT MODULES

No Preview Available !

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM900HG-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
VCES
VGES
IC
ICM
IE
IEM
Pc
Viso
Ve
Tj
Top
Tstg
tpsc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
Maximum power dissipation (Note 3)
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating temperature
Storage temperature
Maximum short circuit pulse width
Conditions
VGE = 0V, Tj = 25°C
VCE = 0V, Tj = 25°C
DC, Tc = 100°C
Pulse
DC
Pulse
Tc = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, QPD 10 pC
(Note 1)
(Note 1)
VCC = 3200V, VCE VCES, VGE = 15V, Tj = 125°C
Ratings
4500
± 20
900
1800
900
1800
11300
10200
5100
–40 ~ +150
–40 ~ +125
–40 ~ +125
10
Unit
V
V
A
A
A
A
W
V
V
°C
°C
°C
µs
ELECTRICAL CHARACTERISTICS
Symbol
ICES
VGE(th)
IGES
Cies
Coes
Cres
Qg
VCE(sat)
td(on)
tr
Eon(10%)
td(off)
tf
Eoff(10%)
VEC
trr
Qrr
Erec(10%)
Item Conditions
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation
voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
(Note 5)
Turn-off delay time
Turn-off fall time
Turn-off switching energy
(Note 5)
Emitter-collector voltage
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
(Note 2), (Note 5)
VCE = VCES, VGE = 0V
VCE = 10 V, IC = 90 mA, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
Tj = 25°C
Tj = 125°C
VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C
VCC = 2250 V, IC = 900 A, VGE = ±15 V, Tj = 25°C
IC = 900 A
(Note 4) Tj = 25°C
VGE = 15 V
Tj = 125°C
VCC = 2250 V, IC = 900 A, VGE = ±15 V
RG = 10 , Tj = 125°C, Ls = 100 nH
Inductive load
VCC = 2250 V, IC = 900 A, VGE = ±15 V
RG = 10 , Tj = 125°C, Ls = 100 nH
Inductive load
IE = 900 A
VGE = 0 V
(Note 4) Tj = 25°C
Tj = 125°C
VCC = 2250 V, IE = 900 A, VGE = ±15 V
RG = 10 , Tj = 125°C, Ls = 100 nH
Inductive load
Limits
Unit
Min Typ Max
——
5 mA
— 12 50
5.0 6.0 7.0 V
— — 0.5 µA
— 162 — nF
— 12 — nF
— 3.6 — nF
— 15 — µC
— 3.45 —
— 3.70 —
V
— — 2.40 µs
— — 1.20 µs
— 4.20 — J/P
— — 6.00 µs
— — 1.20 µs
— 2.50 — J/P
— 4.80 —
— 4.15 —
V
— — 1.80 µs
— 920 — µC
— 1.00 — J/P
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
2
May 2009


Part Number CM900HG-90H
Description HVIGBT MODULES
Maker Mitsubishi
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