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Mitsubishi

CM200EXS-34SA Datasheet Preview

CM200EXS-34SA Datasheet

IGBT

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<IGBT Modules>
CM200EXS-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
Brake-chopper
Collector current IC .............….......................… 2 0 0 A
Collector-emitter voltage VCES ......................… 1 7 0 0 V
Maximum junction temperature T j m a x .............. 1 7 5 °C
Flat base Type
Copper base plate (non-plating)
Tin plating pin terminals
RoHS Directive compliant
Recognized under UL1557, File E323585
APPLICATION
Brake
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL
t=0.8
SECTION A
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3
±0.2
over 3 to 6
±0.3
over 6 to 30 ±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
The tolerance of size between
terminals is assumed to be ±0.4.
Publication Date : February 2015
Ver.1.3
1
E(7)
K(8)
INTERNAL CONNECTION
TH1 TH2
(6) (5)
Es G
(4) (3)
Th
Tr
Di
C(2)
A(1)




Mitsubishi

CM200EXS-34SA Datasheet Preview

CM200EXS-34SA Datasheet

IGBT

No Preview Available !

<IGBT Modules>
CM200EXS-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
IGBT PART
Symbol
Item
Conditions
VCES
Collector-emitter voltage
G-E short-circuited
VGES
IC
ICRM
Ptot
Gate-emitter voltage
Collector current
Total power dissipation
C-E short-circuited
DC, TC=125 °C (Note1, 3)
Pulse, Repetitive (Note2)
TC=25 °C (Note1, 3)
DIODE PART
Symbol
Item
Conditions
VRRM
IF
IFRM
Repetitive peak reverse voltage
Forward current
-
DC (Note1)
Pulse, Repetitive
(Note2)
MODULE
Symbol
Item
Conditions
Visol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Tjmax
TCmax
Maximum junction temperature
Maximum case temperature
Instantaneous event (overload)
(Note3)
T j o p Operating junction temperature Continuous operation (under switching)
T s t g Storage temperature
-
ELECTRICAL CHARACTERISTICS (T j=25 °C, unless otherwise specified)
IGBT PART
Symbol
Item
Conditions
ICES
IGES
VGE(th)
VCesat
(Terminal)
VCesat
(Chip)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
Eon
Eoff
RCC'+EE'
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Internal lead resistance
Internal gate resistance
VCE=VCES, G-E short-circuited
VGE=VGES, C-E short-circuited
IC=20 mA, VCE=10 V
IC=200 A, VGE=15 V,
Refer to the figure of test circuit.
(Note5)
IC=200 A,
VGE=15 V,
(Note5)
T j =25 °C
T j =125 °C
T j =150 °C
T j =25 °C
T j =125 °C
T j =150 °C
VCE=10 V, G-E short-circuited
VCC=1000 V, IC=200 A, VGE=15 V
VCC=1000 V, IC=200 A, VGE=±15 V,
RG=0 Ω, Inductive load
VCC=1000 V, IC=IE=200 A,
VGE=±15 V, RG=0 Ω, T j =150 °C,
Main terminals-chip, per switch,
TC=25 °C (Note3)
-
Min.
-
-
5.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rating
1700
± 20
200
400
2000
Rating
1700
200
400
Rating
4000
175
125
-40 ~ +150
-40 ~ +125
Limits
Typ.
-
-
6.0
2.00
2.20
2.25
1.90
2.10
2.15
-
-
-
1100
-
-
-
-
28
52
-
2.5
Max.
1.0
0.5
6.6
2.50
-
-
2.40
-
-
53
4.3
0.97
-
400
100
700
600
-
-
2.0
-
Unit
V
V
A
W
Unit
V
A
Unit
V
°C
°C
Unit
mA
μA
V
V
V
nF
nC
ns
mJ
mΩ
Ω
Publication Date : February 2015
Ver.1.3
2


Part Number CM200EXS-34SA
Description IGBT
Maker Mitsubishi
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CM200EXS-34SA Datasheet PDF






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