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MX043G - RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the MX043G datasheet PDF (MX043 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for radiation hardened segr-resistant n-channel enhancement mode power mosfet.

Description

SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS PD Tj Tstg IS ISM θJC MAX.

Features

  • Harris FSC260R die total dose: 100 kRAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical dose rate: 2 x 1012 RAD(Si)/sec @ ID ≤ IDM typical neutron: 1013 neutrons/cm2 within pre-radiation parameter limits photocurrent: 17 nA/RAD(Si)/sec typical rated Safe Operating Area Curve for Single event Effects rugged polysilicon gate cell structure with u.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MX043_Microsemi.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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2830 S. Fairview St.
Published: |