MRF581G transistors equivalent, rf & microwave discrete low power transistors.
* Low Noise - 2.5 dB @ 500 MHZ
* Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
* Ftau - 5.0 GHz @ 10v, 75mA
* Cost Effective MacroX Package
Macro X
D.
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
.
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