MRF581 transistor equivalent, npn silicon rf transistor.
* Low Noise Figure
* Low Intermodulation Distortion
* High Gain
* Omnigold™ Metalization System
MAXIMUM RATINGS
IC 200 mA
VCBO
36 V
VCEO
18 V
VEBO.
up to 1.0 GHz.
PACKAGE STYLE
Dim. Are in mm
FEATURES:
* Low Noise Figure
* Low Intermodulation Distortion
.
The MRF581 is Designed for
High current low Power Amplifier Applications up to 1.0 GHz.
PACKAGE STYLE
Dim. Are in mm
FEATURES:
* Low Noise Figure
* Low Intermodulation Distortion
* High Gain
* Omnigold™ Metalization System
MAXIMUM.
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