MG1006 diodes equivalent, gunn diodes.
* CW Designs to 500 mW
* Pulsed Designs to 10 W
* Frequency Coverage Specified from 5.9
–95 GHz
* Low Phase Noise
* High Reliability
Ap.
* Motion Detectors
* Transmitters and Receivers
* Beacons
* Automotive Collision Avoidance Radars
* .
Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1.
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