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MG1006 Datasheet, Microsemi

MG1006 diodes equivalent, gunn diodes.

MG1006 Avg. rating / M : 1.0 rating-12

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MG1006 Datasheet

Features and benefits


* CW Designs to 500 mW
* Pulsed Designs to 10 W
* Frequency Coverage Specified from 5.9
  –95 GHz
* Low Phase Noise
* High Reliability Ap.

Application


* Motion Detectors
* Transmitters and Receivers
* Beacons
* Automotive Collision Avoidance Radars
* .

Description

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1.

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TAGS

MG1006
GUNN
Diodes
Microsemi

Manufacturer


Microsemi (https://www.microsemi.com/)

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