logo

MG1002 Datasheet, Microsemi

MG1002 diodes equivalent, gunn diodes.

MG1002 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 205.73KB)

MG1002 Datasheet

Features and benefits


* CW Designs to 500 mW
* Pulsed Designs to 10 W
* Frequency Coverage Specified from 5.9
  –95 GHz
* Low Phase Noise
* High Reliability Ap.

Application


* Motion Detectors
* Transmitters and Receivers
* Beacons
* Automotive Collision Avoidance Radars
* .

Description

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1.

Image gallery

MG1002 Page 1 MG1002 Page 2 MG1002 Page 3

TAGS

MG1002
GUNN
Diodes
Microsemi

Manufacturer


Microsemi (https://www.microsemi.com/)

Related datasheet

MG100

MG1001

MG1003

MG1004

MG1005

MG1006

MG1007

MG1008

MG1009

MG100G1AL3

MG100G1FL1

MG100G2CH1

MG100G2CL1

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts