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MBR3060CT - Schottky Barrier Rectifiers

Download the MBR3060CT datasheet PDF. This datasheet also covers the MBR3040CT variant, as both devices belong to the same schottky barrier rectifiers family and are provided as variant models within a single manufacturer datasheet.

General Description

Double Schottky configuration for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.

The Metal silicon junction means the devices are majority carrier conduction leading to low power loss and high efficiency.

Key Features

  • Plastic package with UL 94V-0 flammability classification.
  • Flame retardant epoxy molding component.
  • Guardring for overvoltage protection.
  • Low power loss, high efficiency.
  • RoHS compliant (2002/95/EC) 2 12 3 1 3 TO-220AB 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR3040CT-Microsemi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MBR3060CT Schottky Barrier Diode SIRECTIFIER
MBR3060CT Schottky Barrier Rectifier INCHANGE
MBR3060CT SCHOTTKY BARRIER RECTIFIER Pan Jit International
MBR3060CT 30A High Power Schottky Barrier Rectifiers CITC
MBR3060CT Schottky Barrier Rectifier Micro Commercial Components

Other Datasheets by Microsemi (Microchip)

Part Number Description
MBR3060FCT Isolated Schottky Barrier Rectifiers
MBR30100CT Schottky Barrier Rectifiers
MBR30100FCT Isolated Schottky Barrier Rectifiers
MBR30150CT Schottky Barrier Rectifiers
MBR30150FCT Isolated Schottky Barrier Rectifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MBR3040CT to MBR30200CT Schottky Barrier Rectifiers Main product characteristics IF(AV) VRRM Tj(MAX) 30A (2 x 15A) 40V to 200V 175ºC RoHS COMPLIANT Features and benefits • Plastic package with UL 94V-0 flammability classification • Flame retardant epoxy molding component • Guardring for overvoltage protection • Low power loss, high efficiency • RoHS compliant (2002/95/EC) 2 12 3 1 3 TO-220AB 2 Description and applications Double Schottky configuration for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. The Metal silicon junction means the devices are majority carrier conduction leading to low power loss and high efficiency.