LX5511 Datasheet | Microsemi

DESCRIPTION KEY FEATURES Advanced In Ga P HBT 2.3-2.5GHz Operation Single-Polarity 3.3V Supply Quiescent Current 90m A Power Gain 26 d B Total Current 150m A for Pout=18 d Bm OFDM - EVM<3 %, 2.4% Typical 54Mbps/64QAM - Small Footprint: 3x3mm2 - Height 0.9mm - - - - - - APPLICATIONS . Microsemi . C OM The Microsemi LX5511 is a power amplifier that is optimized for WLAN applications in the 2.3GHz - 2.5GHz frequency range. The LX5511 Power Amplifier is implemented as a twostage monolithic microwave integrated circuit (MMIC) with active bias and output pre-matching. The device is manufactured with an In Ga P/Ga As Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With a single low voltage supply of 3.3V 26d B power gain between 2.3-2.5GHz, at a low quiescent current of 90m A. For 20d Bm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of less than 3.0%, and consumes 170m A total DC current.. The LX5511 is available in a 16-pin 3mmx3mm micro-lead quad package (MLPQ). The pact footprint, low profile, and thermal capability of the MLPQ package makes the LX5511 an ideal solution for medium-gain power amplifier requirements for IEEE 802.11b/g applications - IEEE 802.11b/g IMPORTANT: For the most current data, consult MICROSEMI’s website: http://.microsemi. PRODUCT HIGHLIGHT PACKAGE ORDER INFO LQ` Plastic MLPQ 16-Pin Ro HS pliant / Pb-free LX5511LQ Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5511LQ-TR) Copyright © 2000 Rev. 1.0, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 .. TM ® . Microsemi . C OM INFORMATION Thank you for your interest in Microsemi® IPG products. The full data sheet for this device contains proprietary information. To obtain a copy, please contact your local Microsemi sales representative. The name of your local representative can be obtained at the following link...