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LX5511 - InGaP HBT 2.3 - 2.5 GHz Power Amplifier

General Description

KEY

Key Features

  • Advanced InGaP HBT 2.3-2.5GHz Operation Single-Polarity 3.3V Supply Quiescent Current 90mA Power Gain 26 dB Total Current 150mA for Pout=18 dBm OFDM.
  • EVM.

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Part Number Description
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www.DataSheet4U.com TM ® LX5511 InGaP HBT 2.3 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES Advanced InGaP HBT 2.3-2.5GHz Operation Single-Polarity 3.3V Supply Quiescent Current 90mA Power Gain 26 dB Total Current 150mA for Pout=18 dBm OFDM ƒ EVM<3 %, 2.4% Typical 54Mbps/64QAM ƒ Small Footprint: 3x3mm2 ƒ Height 0.9mm ƒ ƒ ƒ ƒ ƒ ƒ APPLICATIONS WWW . Microsemi . C OM The Microsemi LX5511 is a power amplifier that is optimized for WLAN applications in the 2.3GHz – 2.5GHz frequency range. The LX5511 Power Amplifier is implemented as a twostage monolithic microwave integrated circuit (MMIC) with active bias and output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD).