LX5518
DESCRIPTION
KEY FEATURES
Advanced In Ga P HBT 2.4-2.5GHz Operation Single-Polarity 3-5V Supply Power Gain ~ 30 d B 26d Bm @3%EVM,802.11g/5V 24d Bm @3.5%EVM,80211g/3.3V 28d Bm @CCK,802.11b/5V 27d Bm @CCK,802.11b/3.3V 24.5% Efficiency @28d Bm/5V plete On-Chip Input Match Simple Output Match for Optimal EVM
- Temperature-pensated On Chip Output Power Detector with Wide Dynamic Range
- Small Footprint: 3x3mm2
- Low Profile: 0.9mm
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- APPLICATIONS
The LX5518 is a high gain and high power amplifier optimized for 802.11b/g/n applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on-chip input matching, and output pre-matching. The device is manufactured with an In Ga P/Ga As Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage supply of 3-5V, and provides a power gain of 30d B and an output power of +26d Bm at 5V for 3% EVM in the...
