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TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/253
Devices
2N930
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Total Power Dissipation
@ TA = +250C(1) @ TC = +250C(2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.0 mW/0C above TA = +250C 2) Derate linearly 4.0 mW/0C above TC = +250C
Symbol VCEO VCBO VEBO IC
PT
TJ, Tstg
Symbol RθJC
Value 45 60 6.0 30 300 600
-55 to +200
Units Vdc Vdc Vdc mAdc
mW
0C
Max.
2N930 Datasheet
