1N5614US Datasheet | Microsemi

DESCRIPTION This “standard recovery” surface mount rectifier diode series is military qualified to MILPRF-19500/427 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in axial-leaded thru-hole package configurations (see separate data sheet for 1N5614 thru 1N5622). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://.microsemi. APPEARANCE . Microsemi . C OM Package “A” or D-5A FEATURES - - - - - - - Surface mount package series equivalent to the JEDEC registered 1N5614 to 1N5622 series Voidless hermetically sealed glass package Triple-Layer Passivation Internal “Category I” Metallurgical bonds Working Peak Reverse Voltage 200 to 1000 Volts. JAN, JANTX, JANTXV, and JANS available per MILPRF-19500/427 Axial-leaded equivalents also available (see separate data sheet for 1N5614 thru 1N5622) - - - - - - - - APPLICATIONS / BENEFITS Standard recovery 1 Amp rectifiers 200 to 1000 V Military and other high-reliability applications General rectifier applications including bridges, halfbridges, catch diodes, etc. High forward surge current capability Extremely robust construction Low thermal resistance Controlled avalanche with peak reverse power capability Inherently radiation hard as described in Microsemi Micro Note 050 MAXIMUM RATINGS - - - - - - Junction & Storage Temperature: -65 C to +200 C Thermal Resistance: 13o C/W junction to end cap Thermal Impedance: 4.5o C/W @ 10 ms heating time Average Rectified Forward Current (IO): 1.0 Amps @...