1214GN-400LV transistor equivalent, rf/microwave power transistor.
It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
ABSOLUTE MA.
The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms pulse width, 30% duty factor across the 1200 to 1400 MHz band. The transis.
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