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1214GN-650V - RF/Microwave Power Transistor

General Description

The 1214GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 150μs pulse width, 10% duty cycle across the 1200 to 1400 MHz band.

The transistor has internal pre-match for optimal performance.

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Full PDF Text Transcription for 1214GN-650V (Reference)

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1214GN-650V 650 Watts - 50 Volts, 150 s, 10% Broad Band 1200 - 1400 MHz GENERAL DESCRIPTION The 1214GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC ...

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4GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 150μs pulse width, 10% duty cycle across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor can be used for Broadband Avionics Data Link applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.

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