1214GN-650V transistor equivalent, rf/microwave power transistor.
It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
ABSOLUTE MA.
The 1214GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 150μs pulse width, 10% duty cycle across the 1200 to 1400 MHz band. The transisto.
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