MT4LC16M4H9, MT4LC16M4G3 Datasheet - Micron Technology

MT4LC16M4H9 DRAM

The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC16M4H9 and MT4LC16M4G3 are functionally organized as 16,777,216 locations containing 4 bits each. The 16,777,216 memory locations are arranged in.

MT4LC16M4H9 Features

* Single +3.3V ±0.3V power supply

* Industry-standard x4 pinout, timing, functions, and packages

* 12 row, 12 column addresses (H9) or 13 row, 11 column addresses (G3)

* High-performance CMOS silicon-gate process

* All inputs, outputs and clocks are LVTTL-comp

MT4LC16M4G3_MicronTechnology.pdf

MT4LC16M4H9 Datasheet Preview — This datasheet PDF includes multiple part numbers: MT4LC16M4H9, MT4LC16M4G3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MT4LC16M4H9, MT4LC16M4G3

Manufacturer:

Micron Technology

File Size:

386.19 KB

Description:

Dram.

Note:

This datasheet PDF includes multiple part numbers: MT4LC16M4H9, MT4LC16M4G3.
Please refer to the document for exact specifications by model.

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MT4LC16M4H9 MT4LC16M4G3 DRAM Micron Technology

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