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MT28F800B3 - FLASH MEMORY

Download the MT28F800B3 datasheet PDF. This datasheet also includes the MT28F008B3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MT28F008B3_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

General Description

MT28F008B3 MT28F800B3 T B None ET VG WG SG The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits).

Writing and erasing the device is done with a VPP voltage of either 3.3V or 5V, while all operations are performed with a 3.3V VCC.

Due to process technology advances, 5V VPP is optimal for application and production programming.

Overview

www.DataSheet4U.com 8Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply (Smart.

Key Features

  • Eleven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks.
  • Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP.

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