MT28F800B3 Description
Writing and erasing the device is done with a VPP voltage of either 3.3V or 5V, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process.
MT28F800B3 Key Features
- Eleven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory block
- patible with 0.3µm Smart 3 device
- Advanced 0.18µm CMOS floating-gate process
- Address access time: 90ns
- 100,000 ERASE cycles
- Industry-standard pinouts
- Inputs and outputs are fully TTL-patible
- Automated write and erase algorithm
- Two-cycle WRITE/ERASE sequence
- TSOP, SOP and FBGA packaging options