MT28F160A3 Datasheet | Micron Technology

.. ADVANCE‡ 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY Features Low Voltage, Extended Temperature - Thirty-nine erase blocks: BALL ASSIGNMENT (Top View) Two 4K-word boot blocks (protected) Six 4K-word parameter blocks 46-Ball FBGA Thirty-one 32K-word main memory blocks - VCC, VCCQ and VPP voltages: 1 2 3 4 5 6 7 8 2.7V- 3.3V VCC and VPP 2.7V- 3.3V VCCQ- A11 A7 A4 A8 WP# A13 V A19 A 5V VPP fast programming voltage - Address access times: A10 A5 A2 WE# RP# A18 A14 A17 B 90ns, 110ns at 2.7V- 3.3V - Low power consumption: A12 A3 A1 A9 A15 A6 C Standby and deep power-down mode < 1µA (typical ICC) DQ14 CE# A0 DQ5 DQ2 A16 DQ8 D DQ11 Automatic power saving feature (APS mode) - Enhanced WRITE/ERASE SUSPEND (1µs typical) DQ15 DQ0 V DQ6 DQ3 V Q DQ9 E DQ12 - Industry-standard mand set patibility - Hardware block protection DQ7 DQ1 OE# V DQ13 V DQ10 F DQ4 . PP CC SS SS CC e Data She OPTIONS NUMBER -9 -11 T B FD None ET - Timing 90ns access 110ns access - Boot Block Starting Address Top (FFFFFH) Bottom (00000H) - Package 46-ball FBGA (6 x 8 ball grid) - Temperature Range mercial (0°C to +70°C) Extended (-40°C to +85°C) - Lower VCCQ ranges are available upon request. Part Number Example: (Ball Down) NOTE: See page 3 for Ball Description Table. See last page for mechanical drawing. MT28F160A3FD-11 TET acplished by using high voltage which can be supplied on a separate line. The embedded WORD WRITE and BLOCK ERASE functions are fully automated by an on-chip write state machine (WSM), which simplifies these operations and relieves the system processor of secondary tasks. The WSM status can be monitored by an on-chip status register to determine the progress of program/erase tasks. Please refer to Micron’s Web site (.micron./ flash) for the latest data sheet. GENERAL DESCRIPTION The MT28F160A3 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 16,777,216...