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MT28F008B5 - (MT28F008B5 / MT28F800B5) FLASH MEMORY

Download the MT28F008B5 datasheet PDF. This datasheet also covers the MT28F800B5 variant, as both devices belong to the same (mt28f008b5 / mt28f800b5) flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The MT28F008B5 (x8) and MT28F800B5 (x16/x8) OPTIONS MARKING are nonvolatile, electrically block-erasable (Flash), Timing programmable read-only memories containing 80ns -8 8,388,608 bits organized as 524,288 words (16 bits) or

Configurations 1,048,576 bytes (8 bits).

Key Features

  • MT28F008B5 MT28F800B5 5V Only, Dual Supply (Smart 5) 0.18µm Process Technology.
  • Eleven erase blocks: 16KB/8K-word boot block (protected) 40-Pin TSOP Type I 48-Pin TSOP Type I Two 8KB/4K-word parameter blocks.
  • Eight main memory blocks.
  • Smart 5 technology (B5): 5V ±10% VCC 5V ±10% VPP.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT28F800B5_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 8Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY FEATURES MT28F008B5 MT28F800B5 5V Only, Dual Supply (Smart 5) 0.18µm Process Technology • Eleven erase blocks: 16KB/8K-word boot block (protected) 40-Pin TSOP Type I 48-Pin TSOP Type I Two 8KB/4K-word parameter blocks • Eight main memory blocks • Smart 5 technology (B5): 5V ±10% VCC 5V ±10% VPP application/ production programming1 • Advanced 0.18µm CMOS floating-gate process 44-Pin SOP2 • Compatible with 0.3µm Smart 5 device • Address access time: 80ns • 100,000 ERASE cycles • Industry-standard pinouts • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence DataShee • TSOP and SOP packaging options • Byte- or word-wide READ and WRITE DataSheet4U.