• High speed: 10, 12, 15, 20, 25 and 35ns
• High-performance, low-power, CMOS double-metal
• Single +5V ±10% power supply
• Easy memory expansion with CE and OE options
• All inputs and outputs are TTL-compatible
Plastic DIP (300 mil)
Plastic SOJ (300 mil)
• 2V data retention
Commercial (O°C to +70°C)
Industrial (-40°C to +85°C)
Automotive (-40°C to +125°C)
Extended (-55°C to +125°C)
• Part Number Example: MT5C2565DJ-35 P
NOTE: Not all combinations of operating temperature, speed, data retention
and low power are necessarily available. Please contact the factory for availabil-
ity of specific part number combinations.
The MT5C2565 is organized as a 65,536 x 4 SRAM using
a four-transistor memory cell with a high-speed, low-power
CMOS process. MicronSRAMs are fabricated using double-
layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Micron offers chip enable (CE) and output enable (OE) with
this organization. These enhancements can place the out-
puts in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE) and CE inputs are both LOW. Reading is ac-
64Kx 4 SRAM
WITH OUTPUT ENABLE
PIN ASSIGNMENT (Top View)
27 ~ A15
NC 1 '-/ 28 Vee
complished when WE remains HIGH and CE and OE go
LOW. The device offers a reduced power standby mode
when disabled. This allows system designers to meet low
standby power requirements.
The "P" version provides a reduction in both operating
current (Icc) and TTL standby current (15B1). The latter is
achieved through the use ofgated inputs on the WE, OE and
address lines, which also facilitates the design of battery
backed systems. That is, the gated inputs simplify the
design effort and circuitry required to protect against inad-
vertent battery current drain during power-down, when
inputs may be at undefined levels.
All devices operate from a single +5V power supply and
all inputs and outputs are fully Tn-compatible.
Micron Semiconductor, Inc., reS9N&S the right to change products or specifications without notice.
©1993, Micron Semicol'lduc!or, Inc.