Description
The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology.
Features
- High Speed: 35, 45, 55, and 70 Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process.
- Single +5V (+10%) Power Supply.
- Easy memory expansion with CE.
- All inputs and outputs are TTL compatible
28-Pin LCC (EC)
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- Timing 35ns access 45ns access 55ns access 70ns access.
- Package(s) Ceramic DIP (300 mil) Ceramic LCC
-35 -45 -55.
- -70.
- A8.
MT5C2561 Datasheet
