• High speed: 10, 12, 15,20,25 and 35ns
• High-performance, low-power, CMOS double-metal
• Single +5V ±10% power supply
• Easy memory expansion with CE option
• All inputs and outputs are TIL-compatible
Plastic DIP (300 mil)
Plastic SOJ (300 mil)
• 2V data retention
Commercial (O°C to -t;70°C)
Industrial (-40°C to +85°C)
Automotive (-40°C to +125°C)
Extended (-55°C to +125°C)
• Part Number Example: MT5C2561DJ-15 P
NOTE: Not all combinations of operating temperature, speed, data retention
and lowpower are necessarilyavailable. Pleasecontactthe factoryforavailabil-
ity of specific part number combinations.
256K x 1 SRAM
-256Kx 1 SRAM
PIN ASSIGNMENT (Top View)
AIJ 1 "-' 24 Vee
The MT5C2561 is organized as a 262,144 x 1 SRAM using
CMOSprocess. MicronSRAMsare fabricated using double-
layer metal, double-layer polysilicon technology.
offers chip enable (C13) with all organizations. This
enhancement can place the outputs in High-Z for
additionalflexibility insystem design. Thex1 configuration
features separate data input and output.
Writing to these devices is accomplished when write
enable (WE) and CEinputs are both LOW. Reading is
accomplished when WE remains HIGH and CE goes LOW.
The device offers a reduced power standby mode when
disabled. This allows system designers to meet low standby
The "P" version prOVides a reduction in both operating
current (Icc) and TTL standby current (ISB!). The latter is
achieved through the use <>f gated inputs on the WE and
address. lines, which also facilitates the design of battery
backed systems. That is, the gated inputs simplify the
.design effort and circuitry requiredtoprotect against inad-
vertent battery current drain during power-down, when
inputs may be at undefined levels.
All devices operate from a single +5V power supply and
all inputs and outputs are fully TTL-compatible.
Micron SemlconductOr,lnc., reserves the right to changeproducts or specifications without notice.
01993, Micron SemIconduc1or, Inc.