TN2106 fet equivalent, n-channel vertical dmos fet.
* Free from Secondary Breakdown
* Low Power Drive Requirement
* Ease of Paralleling
* Low CISS and Fast Switching Speeds
* Excellent Thermal Stability.
* Logic-Level Interfaces (Ideal for TTL and CMOS)
* Solid-State Relays
* Battery-Operated Systems
* Phot.
The TN2106 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors an.
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