* RDS(ON)≦4.8mΩ@VGS=10V
* RDS(ON)≦9mΩ@VGS=4.5V
* ESD Protected
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance .

* Power Management in Note book
* Battery Powered System
* DC/DC Converter
* Load Switch (TO-252-3L) To.

The ME90N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.

ME90N03-G

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