* RDS(ON)≦8mΩ@VGS=-10V
* RDS(ON)≦11mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC curr.

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter PIN CONFIGURATIO.

The ME85P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.

ME85P03-G

ME8508

ME80N08

ME80N08-G

ME80N08A

ME80N08A-G

ME80N08AF

ME80N08AF-G

ME80N08AH

ME80N08AH-G

ME80N75AF

ME80N75AF-G

ME80N75AT

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts