ME80N08-G datasheet, mosfet equivalent, Matsuki

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Features and benefits

* RDS(ON)≦4.9mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS .

Application

* Power Management
* DC/DC Converter
* Load Switch e Ordering Information: ME80N08 (Pb-free) ME80N08-G (Gre.

Description

The ME80N08 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO-2.

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