ME8205E-G datasheet, mosfet equivalent, Matsuki

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Features and benefits

* RDS(ON)≦22mΩ@VGS=4.5V
* RDS(ON)≦23mΩ@VGS=4.0V
* RDS(ON)≦26mΩ@VGS=3.0V
* RDS(ON)≦29mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS.

Application

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.

Description

The ME8205E is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are .

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