ME7908ED-G datasheet, mosfet equivalent, Matsuki

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Features and benefits

* RDS(ON)≦16mΩ@VGS=4.5V
* RDS(ON)≦24mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC curr.

Application

* Power Management in Note book
* Battery Powered System
* DC/DC Converter low side switching
* Load Swi.

Description

The ME7908ED-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology . This high density process is especially tailored to minimize on-state resistance. These devices are .

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