ME7906ED mosfet equivalent, n-channel mosfet.
* RDS(ON)≦22mΩ@VGS=4.5V
* RDS(ON)≦23mΩ@VGS=4V
* RDS(ON)≦30mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resi.
* Power Management in Note book
* Battery Powered System
* DC/DC Converter low side switching
* Load Swi.
The ME7906ED is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology . This high density process is especially tailored to minimize on-state resistance. These devices are pa.
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