* RDS(ON)≦31mΩ@VGS=-4.5V
* RDS(ON)≦43mΩ@VGS=-2.5V
* RDS(ON)≦63mΩ@VGS=-1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.

The ME6987-G is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are.

ME6980ED

ME6980ED-G

ME6982ED

ME6982ED-G

ME6986ED

ME6986ED-G

ME6970

ME6970-G

ME6970D

ME6970D-G

ME6972

ME6972-G

ME6978ED

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