ME6982ED-G mosfet equivalent, dual n-channel mosfet.
* RDS(ON)≦19mΩ@VGS=4.5V
* RDS(ON)≦24mΩ@VGS=2.5V
* RDS(ON)≦39mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-re.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC
e.
The ME6982ED Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are partic.
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